Transport Phenomena in Electronic Materials Processing

Co-chair(s):
Ashurst, W. R., Auburn University

This has been a well attended core session of area 8e for a number of years. It provides an opportunity for those interested in electronic materials to interact with experts in transport. This fits with the proposed topical conference in microelectronics. This session treats all aspects of the transport of mass, momentum and energy in electronic materials processing. Both computational and experimental papers are solicited.

Papers:
3:15 PM
(613a) Multi-Scale Simulation of Quantum Dot Formation in Metal Thin-Film Epitaxy
3:40 PM
(613b) Multiscale Modeling and Neural-Network Based Optimization of a Thin Film Deposition Process
4:05 PM
(613c) Analysis of Electromigration-Driven Interactions between Voids in Metallic Thin Films
4:30 PM
(613d) Effect of Rotational Speed and Marangoni Stresses on Local Flow Structure in Silicon Melt of Czochralski Crystal Growth Process
4:55 PM
(613e) Defect Engineering by Short-Annealing-Time Methods for Ultrashallow Junction Formation
5:20 PM
(613f) A Comprehensive Model for Coupled Oxide Precipitation and Point Defect Aggregation in Crystalline Silicon

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Pricing

Individuals

AIChE Members $150.00
AIChE Graduate Student Members Free
AIChE Undergraduate Student Members Free
Non-Members $225.00