(222ai) Numerical Simulation for Coating of Titanium Nitride Thin Film in a Tubular Reactor By a Thermal CVD Method
AIChE Annual Meeting
2013
2013 AIChE Annual Meeting
Engineering Sciences and Fundamentals
Poster Session: Thermodynamics and Transport Properties (Area 1A)
Monday, November 4, 2013 - 6:00pm to 8:00pm
In this study, numerical simulation for coating of titanium nitride (TiN) thin film in a tubular reactor by thermal CVD method has been conducted. From previous our experimental results, it was suggested that the coating progressed successively from gas phase reaction to surface reaction. Growth rate of the TiN film along the axis of the reactor was predicted by solving heat and mass transfer under fully developed Poiseuille flow. Governing equations and boundary conditions were discretized using the finite volume method. The values of physical property in each place were computed using mixed mean temperature. Moreover, the wall temperature conditions of a tubular reactor used the values of experimental data. Experimental results for dependences of gas flow rate and setting temperature on the growth rate could be reproduced partly by the calculated ones. Furthermore, the predictive accuracy of growth rate profile was raised by the nonlinear least-squares method using the initial reaction rate constants due to the experimental ones.
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