(622a) Electrochemical Synthesis of Ultra-Long Sb2Te3 Nanoribbons for Phase Change Memory

Phase change memory is one of the promising candidates for the next generation nonvolatile memory because of faster operating rate and high storage density. Chalcogenides such as Sb2Te3, Ge2Te¬3 and their ternary alloys have been extensively studied as phase transition materials because of the ability to transition between amorphous and crystalline phase at moderate temperature and different electrical properties at crystalline and amorphous phase. In conventional phase change memory, chalcogenides were deposited using top-down vacuum processes. In this work, SbxTey nanoribbons with the controllable dimensions were synthesized on pre-determined locations by novel Lithographically Patterned Nanowire Electrodeposition (LPNE) method. The composition of SbxTey nanoribbons was tuned to modulate the electrical properties including FET properties. To determine size dependent transition temperature, the I-V characteristics of Sb2Te3 nanoribbons with different thickness and width were measured in both the SET (crystalline) and RESET (amorphous) states.