(195m) Structural Characterization of Defects in Hexagonal Boron Nitride Using Scanning Probe Spectroscopy

Authors: 
Kozawa, D., Massachusetts Institute of Technology
Govind Rajan, A., Massachusetts Institute of Technology
Koman, V., Massachusetts Institute of Technology
Silmore, K., Massachusetts Institute of Technology
Strano, M., Massachusetts Institute of Technology
Liu, P., Massachusetts Institute of Technology
Liu, A. T., Massachusetts Institute of Technology
Blankschtein, D., Massachusetts Institute of Technology
Lattice defects formed in 2D hexagonal boron nitride (hBN) have emerged as unique nanopores. Their most useful property is photoluminescence (PL) from the defects in the form of single-photon emission even at room temperature. Despite the fact that the defects exhibit PL at multiple wavelengths in a visible range, which vary from defect to defect, the statistic characterization and analysis have been limited attention. To systematically characterize individual defects of hBN, we develop scanning probe spectroscopy system combined with an atomic force microscope and a time-correlated single photon counting module. This system allows us to automatically measure thousands of PL spectra at each point, and correlate with PL lifetime, PL excitation, and thickness from individual defects. The statistical analysis of these collected data provides us insight into physical and chemical properties of nanoscale defects in hBN and potential for ultrasensitive sensing and quantum photonics.