(34a) Printing Fully Stretchable Thin-Film-Transistor Array | AIChE

(34a) Printing Fully Stretchable Thin-Film-Transistor Array

Authors 

Liu, J. - Presenter, Stanford University
Wang, J., Stanford University
Bao, Z., Stanford University
Wang, S., Stanford University
Development of high-performance electronics that can intimately and seamlessly integrate with human bodies and biological systems at the cellular level are the key for the next generation consumable wearable electronics and biomedical devices, which requires device to possess biosystem-compatible mechanical and chemical properties. Recently, intrinsically stretchable polymeric electronic materials including semiconductors, conductors and dielectrics are intensively reported and considered as ideal candidates for such applications given their unique electrical and mechanical properties. However, the porous structures and poor chemical resistance prevent intrinsically stretchable polymeric materials to be integrated into functional electronics (e.g. thin-film transistor array) through the conventional fabrication process. Here, we present the first fully stretchable thin-film transistors array through the inkjet printing of intrinsically stretchable semiconductors. To enable this solution-processed assemble by printing, we invented a new perfluorinated dielectric material that is 1) extremely tolerate to most organic solvent for the fabrication, 2) directly photopatternable with sub 10 µm feature size by conventional lithographer and a chemically orthogonal development process and 3) highly stretchable with > 200% stretchability. In addition, we have developed an ink containing conjugated semiconducting polymer with siloxane-azide crosslink for the inkjet-printing patterning of semiconductor. Using perfluorinated dielectric material as substrate, dielectric layer and passivation, we can achieve the direct, reliable inkjet-printed pattern of intrinsically stretchable semiconductor into the transistor array with record-high active materials coverage, device yield and device density, and ultra-high stability in chemical and biological solutions. The electrical and mechanical characterizations show that the transistor array kept its original performance without significant degradation under 100% uniaxial strains and through multiple cycles. As the initial demonstration, the stretchable transistor array has been used as the backplane for fabrication of fully stretchable light-emitting diode (LED) display. We believe this unique dielectric materials and fabrication process can be applied to virtually any stretchable materials and impact on the low-cost fabrication of fully stretchable electronics for wearable and biomedical device in industry.