(696a) Enhanced Information Transfer in the Lithographic Process Using Block Copolymer Resists

In this paper we present our approach for integrating block copolymers into the lithographic process so as to enable molecular-level control over the dimensions and shapes of nanoscale patterned resist features and simultaneously retain essential process attributes such as pattern perfection, registration, and the ability to create non-regular device-oriented structures. Combining self-assembling materials with advanced lithographic tools may allow current manufacturing techniques to be extended to the scale of 10 nm and below and meet the long-term requirements detailed in the International Technology Roadmap for Semiconductors.