(556c) Radiation and Electron-Injection Induced Effects in Ga2O3 Schottky Rectifiers | AIChE

(556c) Radiation and Electron-Injection Induced Effects in Ga2O3 Schottky Rectifiers


Modak, S. - Presenter, University of Central Florida
Chernyak, L., University of Central Florida
Yang, J., University of Florida
Ren, F., University of Florida
Pearton, S., University of Florida
Gallium oxide is an emerging ultra-wide bandgap semiconductor with a bandgap of 4.5-4.9eV and applications in solar blind UV detection and power electronics. The main factor limiting Ga2O3 technology so far is the unavailability of p-type Ga2O3, but recent advances have shown a promising future for developments in p-type Ga2O3. In the advent of p-type conductivity, minority carrier transport will be of primary importance as the minority carrier diffusion length defines the performance of bipolar devices. One of the major issues in the current ZnO and GaN device technology, is the low diffusion length of minority carriers. It has been previously shown that in p-type GaN and ZnO, which are both wide bandgap semiconductors, electron injection either with an electron beam or forward bias, results in significant increase in minority carrier diffusion length1, 2. Similar effects have been very recently observed in Ga2O3 subjected to electron beam irradiation3. An increase in the diffusion length directly correlates to the device performance for bipolar devices. In this study, we explore the impact of electron injection on the minority carrier transport, in particular, minority carrier diffusion length (L) and carrier lifetime in Ga2O3 devices. The viability of this effect is probed regarding ‘healing’ the radiation damage incurred by the wide bandgap sensors and devices exposed to hazardous radiation in lower Earth satellite orbits.

  1. Burdett, W. C., O. Lopatiuk, A. Osinsky, S. J. Pearton, and L. Chernyak, The optical signature of electron injection in p-(Al)GaN. Superlattice Microst. 2004, 34, 55-62.
  2. Lopatiuk-Tirpak, O.; Chernyak, L.; Xiu, F. X.; Liu, J. L.; Jang, S.; Ren, F.; Pearton, S. J.; Gartsman, K.; Feldman, Y.; Osinsky, A.; Chow, P., Studies of minority carrier diffusion length increase in p-type ZnO : Sb. J. Appl. Phys. 2006, 100 (8), 3.
  3. Modak, S.; Lee, J.; Chernyak, L.; Yang, J.; Ren, F.; Pearton, S. J.; Khodorov, S.; Lubomirsky, I., Electron injection-induced effects in Si-doped β-Ga2O3. AIP Advances 2019, 9 (1), 015127.



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