(556b) Radiation Damage E?ects in Ga2O3 Materials and Devices | AIChE

(556b) Radiation Damage E?ects in Ga2O3 Materials and Devices


Pearton, S. - Presenter, University of Florida
Ren, F., University of Florida
Fares, C., University of Florida
Yang, J., University of Florida
Carey, P. IV, University of Florida
Xian, M., University of Florida
Kim, J., Korea University
Polyakov, A., National University of Science and Technology MISiS,
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially b-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of b-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.



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