(711g) Three-Dimensional Multiscale CFD Modeling for PECVD of Amorphous Silicon Thin Films
AIChE Annual Meeting
Thursday, November 2, 2017 - 2:24pm to 2:43pm
Motivated by the above considerations, the 2D axisymmetric framework previously developed is extended to the three dimensional (3D) spatial domain. Using a 3D render of a typical chambered, parallel-plate PECVD reactor, a CFD model is proposed which is capable of reproducing both accurate plasma chemistry and fluid flow into the reaction zone through the showerhead region. Additionally, a detailed kinetic Monte Carlo (kMC) algorithm developed previously  is applied to simulate the the surface of the wafer in order to capture both the exchange of mass and energy, as well as the character of the a-Si:H thin-film. Given the computationally demanding nature of the transient simulations, a parallel computation strategy is applied which allows for the discretization of both the macroscopic CFD volume and the microscopic kMC algorithm. The outlined multiscale model is applied to the deposition of 300 nm thick a-Si:H films revealing significant non-uniformities in the thickness and porosity of the thin-film product. Additionally, comparison to the previously mentioned 2D axisymmetric model provides insight to the utility of reduced dimensional approaches.
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