(711c) Run-to-Run Control of PECVD Systems: Application to a Multiscale CFD Model of Amorphous Silicon Deposition
AIChE Annual Meeting
Thursday, November 2, 2017 - 1:08pm to 1:27pm
Consequently, we propose the application of the newly developed run-to-run control strategy to the simulated deposition of amorphous silicon (a-Si:H) thin films using a transient, multiscale CFD model. The two-dimensional axisymmetric model recently developed by Crose et al.  has been shown to accurately capture the complex behavior of the PECVD reactor and to reproduce experimentally observed non-uniformities with respect to the film thickness and porosity, and will be used throughout this work. A computationally efficient parallel processing scheme allows for the application of the run-to-run algorithm to 40 serial batch simulations which are shown to reduce the product offset from the 300 nm thickness set-point. Additional considerations are made with respect to the porosity and hydrogen content of the amorphous silicon product.
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