(435e) Modeling of Transport and Reaction in a Novel Hydride Vapor Phase Epitaxy System
AIChE Annual Meeting
Tuesday, October 31, 2017 - 4:15pm to 4:30pm
We have proposed a novel HVPE configuration potentially having significantly greater throughput and lower per unit production cost. In this talk, three-dimensional transient transport model of this design coupling a chemical model applicable to HVPE growth of various III-V materials is presented. Finite element methods have been employed to solve this model, the result of which relates process outputs (including materials growth rate, uniformity, and composition, etc.) with process inputs (including reactor geometry, operating conditions, etc.). Besides the ordinary design variables like flow rate and temperature, the influences of dynamic operating factors on process characteristics and corresponding product properties are studied in this work. Through the insights gained in the analysis of transport and reaction within the constraints of different parameter regions, sensitive variables and parameters are identified, based on which optimal reactor geometry and process operating strategies are further determined. This model-based approach could be used to guide experimental design in a much more effective way. The methodology of problem formulation and numerical techniques used in this work may also be extended to design and solve a wider range of chemical vapor deposition systems.
 K. L. Schulte, W. L. Rance, R. C. Reedy, A. J. Ptak, D. L. Young, and T. F. Kuech, âControlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs,â Journal of Crystal Growth, vol. 352, no. 1, pp. 253â257, Aug. 2012.
 J. Simon, K. L. Schulte, D. L. Young, N. M. Haegel, and A. J. Ptak, âGaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers,â IEEE Journal of Photovoltaics, vol. 6, no. 1, pp. 191â195, Jan. 2016.