(201af) Photovoltaic and Spectral Response of WS2/Silicon Heterojunctions

Berry, V. - Presenter, University of Illinois at Chicago
Behura, S., University of Illinois at Chicago
Wen, Y., University of Illinois at Chicago
Debbarma, R., University of Illinois at Chicago
Nguyen, P., Kansas State University
Che, S., University of Illinois at Chicago
Deng, S., University of Illinois at Chicago
Transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are attractive because of their ultrathin structure and inimitable electronic band structures with unique functionalities including: indirect-to-direct bandgap transition, semiconductor-to-metal phase engineering, and the large excitonic effect. Further, the TMDs with thickness-dependent tunable optical bandgaps in the near-infrared to visible spectral range can exhibit extremely strong light–matter interactions suitable for energy harvesting devices such as solar cells. Currently, the WS2-based solar cells are realized via micromechanical exfoliation or transfer of two-dimensional (2D) WS2 layers onto conventional 3D bulk semiconductors. Here, we report the photovoltaic response of WS2/Si heterojunction solar cells developed via chemical vapor deposition (CVD). The photoresponse and quantum efficiency of the WS2/Si-based solar cell devices are also investigated in order to further understand the junction characteristics (trap states and recombination mechanisms). The present study opens avenues for the direct integration of CVD-grown monolayer WS2 with Si-based heterojunctions for efficient optoelectronic devices.