(561a) Controlling Charge Transport in Patterned Organic Thin Film Transistors Through Solution Shearing and Lattice Strain

Solution deposition of organic semiconductors (OSC) is a leading contender for producing large-area, inexpensive, and flexible organic electronics. We recently developed a solution deposition method for OSCs called the solution shearing method which resulted in lattice strained OSCs that yielded higher performing organic field effect transistor (OFET) by tuning the electronic overlap. However, industrial applications of these lattice strained OFETs requires that the OFETS be patterned, and it is unclear whether the patterned OFETs will still maintain a lattice strained crystal packing. We have developed a surface functionalization procedure that utilizes hydrophobic/hydrophilic interactions on the interface to isolate lattice strained OSCs. We show the existence of strain though X-ray diffraction techniques, and study the charge transport properties of the patterned, lattice strained OFETs. We show that charge carrier mobilities up to 2 cm²/Vs are possible in the patterned OFETs, and that strained OFETs can exist at patterning sizes of 100 microns and lower. We show that the pattern size can have an effect on the lattice strain possible in the OSCs, and investigate methods that enable sub-micron scale patterning using solution shearing.