(250b) RF Plasmas for Thin Film Etching, Deposition, and Surface Modification | AIChE

(250b) RF Plasmas for Thin Film Etching, Deposition, and Surface Modification


                  
rf Plasmas for Thin Film Etching, Deposition, and Surface Modification

Dennis W. Hess
School of Chemical & Biomolecular
Engineering
Georgia Institute of Technology
Atlanta, GA 
30332-0100

Plasmas (sometimes referred to as glow discharges) used in thin film
processing are partially ionized gases composed of ions, electrons and a
variety of neutral species.  This atmosphere is highly chemically
reactive and so promotes gas phase and surface reaction rates at low
temperatures.  In addition to electron impact collisions in the gas phase
to generate reactive species, ion and electron bombardment of surfaces occurs
during plasma exposure.  These plasma characteristics permit film etching,
polymerization, deposition and surface modification at low (room)
temperature.  Due to the extensive array of chemistries that are possible,
numerous applications ranging from electronic, photonic, sensor and
microfluidic device fabrication, surface sterilization, artifact restoration
and adhesion promotion have been explored.  This talk will describe the
exploitation of these unique plasma properties to control thin film and surface
chemistry, physics and nanostructure for specific application areas.  Two
applications will be discussed:  etching of copper that is used as an
interconnect material for integrated circuit fabrication and modification of
surfaces such as paper and metals to control fluid wetting and adhesion.

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