(217ds) Crystallinity of the Atomic Layer Deposited Tiox Thin Films | AIChE

(217ds) Crystallinity of the Atomic Layer Deposited Tiox Thin Films


Kim, D. H., Chonnam National University

Titanium dioxide (TiO2) has many attractive physicochemical properties and thus lends itself to various applications, such as optical coatings for anti-reflection, high dielectric layers for electronic devices, biocompatible coatings for biomaterials, and photosensitive layers for photocatalyst and solar cells. Because of their great variety of applications, TiO2 films have been prepared by many physical and chemical deposition techniques. Among these techniques, atomic layer deposition (ALD) has recently received great attention for the preparation of TiO2 thin films conformality over large areas. In this work, by using cyclic pulses of tetrakis-dimethylamido-titanium (TDMAT), H2, H2O2, and ozone, TiO2 thin films were grown at the deposition temperatures of 100-200 °C to investigate the effects of counter reactants on the crystallinity of the ALD films, because the crystallinity strongly affect to the performance of various TiO2-based photonic devices. The film growth rate (thickness/cycle) was in the range of 0.05 - 0.1 nm/cycle depending on the reaction system. Regardless of the reactant types, the TiO2 thickness shows a linear relation to the number of cycles and the film deposited on holes-patterned substrate shows excellent step coverage.