(531e) Quantum Tunneling In Carbon Nanotube Transistors


A modified model is used to discuss the quantum tunneling effects in carbon nanotube (CNT) transistors. In this work, CNTs with nano-meter diameters are studied. This modified prototype model can consider several CNT-related parameters such as CNT diameter, applied electrical field, effective mass,tunneling barrier height affected by metal contacts or strain, and tunneling width tuned by dopants. Numerical results will be discussed for design and performance issues of transistors. Some of the results show the possibilities of obtaining high currents more easily. However, some currents are not desirable or should be kept as low as possible. The on/off tunneling ratio can evaluate the transistor performance in circuit design. Some further results can be used to explain the working principles of CNT-transistor sensors.