(232r) A Model of HfO2 Chemical Vapor Deposition Chemistry and Fluid Mechanics On H-Si Surfaces

We present a model describing the analysis of adsorption of hafnium tert-butoxide (HTB) and tetrakis dimethylamino hafnium (TDMAH) onto hydrogen terminated Si at reaction rate limited regime between 60-250ºC, during the steady state chemical vapor deposition (CVD) of high dielectric material HfO2 in a tubular flow reactor. A set of 30 elementary gas phase and surface reactions is used to simulate the adsorption process. Transport species from gas phase to surface is accounted using multicomponent transport properties. The reaction mechanisms are deduced by ab initio theoretical calculation estimates. Experimental measurement of film growth rate is performed by in situ ATR-FTIR and interferometer. Velocity, temperature, and concentration profiles along the Si substrate are determined by finite element analysis calculations.