(524f) Cvd Growth of Gallium Nitride Nanowire Using Patterned Substrates

Wu, Z. - Presenter, Northeastern University
Richter, C. - Presenter, Yale University

Chemical vapor deposition (CVD) system was used to grow GaN nanowire based on the vapor-liquid-solid (VLS) mechanism. Nanoporous alumina templates and electron-beam lithography methods was used to pattern the substrate with the required catalyst necessary for the growth of the nanostructures. Different morphologies of GaN structure will also be presented.