(449c) The Electronic Structure of Metals on High-K Dielectrics; Metal Induced Gap States for the Ru and Ruo2 on Hfo2 Interfaces

We have used periodic Density Functional Theory to predict the electronic structure of Ru and RuO2 metals on monoclinic HfO2. The evolution of the interface electronic structure indicates that the interface states are a combination of the specific nature of interfacial chemical bonding and the penetration of metalic states into the dielectric. These results provide a more detailed view of the fundamental nature of interfacial electronic structure and what gives rise to Fermi Level Pinning at semiconductor metal interfaces.