First Principles on Optical and Electronic Properties Si Nanowires
AIChE Annual Meeting
2005
2005 Annual Meeting
Engineering Sciences and Fundamentals
Poster Session: Thermodynamics and Transport Properties
Monday, October 31, 2005 - 6:00pm to 8:30pm
The structural, electric and optical properties of hydrogen-passivated silicon nanowires with [001], [011], and [111] growth directions and diameter up to 3nm are studied from first principles. The effects of nanowire diameter, growth directions, surface structures, and relative stability of these nanowire systems are systematically investigated. We find that quantum confinement still plays an important role for diameter upto 3nm for all growth directions and surface structures. All factors such as nanowire diameter, growth direction, and surface structure are found to cause significant changes in energy band gap, DOS, and band structures of the nanowires.