(342n) Solidification Model for Silicon Crystal-Melt Interface in the Horizontal Ribbon Growth Process: A Molecular Dynamics Study
AIChE Annual Meeting
Tuesday, November 9, 2021 - 3:30pm to 5:00pm
We implement a molecular dynamic (MD) based forced velocity solidification (FVS) model for silicon crystal growth from the melt. The continuous solidification at the crystal-melt interface between a heat source and sink was employed to provide a molecular understanding of single-silicon crystallization from horizontal ribbon growthâa cost-effective but not fully understood technique of manufacturing silicon wafers for solar cells. We track the evolution of crystals on the Si(111) surface at varying pulling speeds (0.005 â 0.05 Ã /ps), studied the solidification front's thermal profiles, and their combined effects on the stability of the crystal-melt interface. We found that the thermal gradient across the solidification front influences the interface's position and latent heat dissipation speed across the interface. Finally, we discuss a molecular perspective on the role of heat fluxes in crystal and melt sides of the interface in stabilizing the crystal-melt interface at high pulling rates.