(321d) Graphene and MoS2 Gel for Aligned 3D Printing for Electronic and Mechanical Analysis | AIChE

(321d) Graphene and MoS2 Gel for Aligned 3D Printing for Electronic and Mechanical Analysis


Carvalho Fernandes, D. C. - Presenter, University of Illinois at Chicago
Berry, V., University of Illinois at Chicago
Poulin, P., Centre de Recherche Paul Pascal, CNRS Bordeaux
Designing 3D printed micro-architectures using electronic materials with well-designed electronic structures will potentially lead to accessible device fabrication for ‘on-demand’ applications. Here we show gelation of six different concentration of graphene/MoS2 (100:0, 10:90,30:70, 50:50, 70:30, 90:10) and Graphene/BN (50:50) alloys. Rheology studies show the viscoelastic properties of the gels, in addition to providing shield yield stress. The shear-thinning behavior provides the ability of fabrication of 3D printed devices in an aligned controlled nozzle-extrusion based modified 3D printer, enabling the fabrication of electrodes for analyzing electron-tunneling barrier width between conductive graphene-centers and studying the resultant mechanical properties. The 3D printed devices were solidified by removing water through lyophilization. The ordered graphitic region with sp2 hybridized carbon atoms in the graphene sheets is in the order of 8.28 ±0.23 nm. The temperature-dependent electronic transport 3D printed electrodes structures exhibited a transport-barrier of 16 meV and a tunneling width of 0.56 nm (Fowler Nordheim electron tunneling) with graphene centers having a carrier concentration of 2.63457*1012/cm2. By modifying the graphene/MoS2 concentration, we were able to control the Young’s Modulus of the structure between 0.6 and 1.6 MPa. We envision that the proposed 3D-printing of gels of nanomaterial will lead to an evolution in the design of next-generation of ‘on-demand’ printed electronic and electromechanical devices.