One-Step Deposition of Photocatalytically Active TiO2 Films Via Wire-to-Plate Dielectric Barrier Discharge Plasma at Atmospheric Pressure
- Type: Conference Presentation
- Conference Type:
AIChE Spring Meeting and Global Congress on Process Safety
- Presentation Date:
March 14, 2011
- Skill Level:
One-step deposition of photocatalytically active TiO2 films via wire-to-plate dielectric barrier discharge plasma at atmospheric pressure
Lan-Bo Di, Xiao-Song Li and Ai-Min Zhu*
Laboratory of Plasma Physical Chemistry, DalianUniversity of Technology, Dalian 116024, China
*Corresponding author. E-mail: firstname.lastname@example.org
TiO2 films play an important role in extensive applications such as photocatalysis, photovoltaics, biocompatibility, and sanitary disinfection [1, 2]. Low-temperature film fabrication processes are essential for all thermally sensitive or unstable substrate materials such as organic polymers and textiles. Plasma CVD is highly suitable for low-temperature fabrication, but it has mainly been low pressure incorporated with sophisticated discharge and vacuum systems that have been adopted. [3¨C5] Thus, in recent years, considerable attention has been paid to the development of atmospheric-pressure, non-thermal plasma CVD technologies .
Dielectric barrier discharge (DBD) was widely used for generating atmospheric pressure, non-thermal plasmas and recently explored for preparing TiO2nanopowders or films [7-18]. In this paper, wire-to-plate DBD induced plasma CVD device, as illustrated in ﬁgure 1, was employed to fabricate photocatalytically active TiO2 films on moving glass or plastic substrates at atmospheric pressure. The discharge gap has an adjustable distance from 0.3 mm to 0.6 mm.
TiCl4vapour, as the Ti precursor, was carried by Ar gas from a bubbler placed in an ice-water bath, mixed with Ar diluting gas and then ﬂowed into the discharge area. Dry air was used as the oxygen precursor.
The photocatalytic reaction test for TiO2 films was performed by complete oxidation of HCHO in simulated air with a continuous flow reactor under UV irradiation of a 254 nm lamp (8 W) .
The as-deposited TiO2 films on cover glass or plastic substrates, prepared at 1 L°¤min-1 total flow rate, 27 W input power, 0.3 mm discharge gap, and 29 Pa TiCl4 partial pressure, exhibited high photocatalytic activity. The apparent rate constants of the TiO2 films on cover glass and plastic substrates are 0.99 s-1 and 0.52 s-1, respectively.
The influence of input power, discharge gap and the partial pressure of TiCl4 on the photocatalytic activity of the as-deposited TiO2 films were also investigated.
 R Schaub, E Wahlström, A Ronnau, E Laesgaard, I Stensgaard, F Besenbacher 2003 Science 299 377
 E W McFarland, J Tang 2003 Nature 421 616
 K L Choy 2003 Prog. Mater. Sci. 48 57
 T Busani, R A B Devine 2005 Semicond. Sci. Technol. 20 870
 H Szymanowski, A Sobczyk, M Gazicki-Lipman, W Jakubowski, L Klimek 2005 Surf. Coat. Technol. 200 1036
 J R Roth 2001 Industrial Plasma Engineering, Vol 2: Applications to Nonthermal Plasma Processing (Bristol: Institute of Physics Publishing)
 A-M Zhu, L-H Nie, X-L Zhang, C Shi, Z-M Song and Y Xu 2004 Plasma Sci. Technol. 6 2546
 L-H Nie, C Shi, Y Xu, Q-H Wu and A-M Zhu 2007 Plasma Process. Polym. 4 574
 X-L Zhang, L-H Nie, Y Xu, C Shi, X-F Yang and A-M Zhu 2007 J. Phys. D: Appl. Phys. 40 1763
 A-M Zhu, L-H Nie, Q-H Wu, X-L Zhang, X-F Yang, Y Xu and C Shi 2007 Chem. Vapor Deposition 13 141
 L-B Di, X-S Li, C Shi, Y Xu, D-Z Zhao and A-M Zhu 2009 J. Phys. D: Appl. Phys. 42 032001
 Bai H, Chen C, Lin C, Den W and Chang C 2004 Ind. Eng. Chem. Res. 43 7200
 C Chen, H Bai, H M Chein and T M Chen 2007 Aerosol Sci. Tech. 41 1018
 C Chen, H Bai, S-M Chang, C Chang and W Den 2007 J. Nanopart. Res. 9 365
 C Chen, H Bai and C Chang 2007 J. Phys. Chem. C 111 15228
 S K Xu, J Z Xu and X B Peng 2006 Plasma Sci. Technol. 8 293
 X W Zhang, Y Guo and G R Han 2007 Plasma Sci. Technol. 9 674
 J L Hodgkinson, H M Yates, D W Sheel 2009 Plasma Process. Polym. 6 575